STMicroelectronics will build integrated silicon carbide

STMicroelectronics will build integrated silicon carbide substrate manufacturing plant in Italy

  • First SiC epitaxial substrate fabrication facility in Europe
  • Full vertical integration to strengthen substrate supply for SiC devices and solutions enabling automotive and industrial customers to move to electrification and higher efficiency

Geneva, Switzerland, October 5, 2022 STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the full spectrum of electronics applications, will build an integrated silicon carbide (SiC) substrate manufacturing facility in Italy to meet demand growth of ST’s customers in SiC devices in automotive and industrial applications as they transition to electrification and seek greater efficiency. The start of production is scheduled for 2023, allowing a balanced supply of SiC substrate between internal supply and market supply.

The SiC substrate fab, built at ST’s Catania site in Italy next to the existing SiC device fab, will be a first in Europe for volume production of 150mm SiC epitaxial substrates, integrating all stages of the production flow. ST is committed to developing 200mm wafers in the near future.

This project is a key step in advancing ST’s vertical integration strategy for its SiC business. The investment of 730 million euros over five years will be financially supported by the Italian State as part of the national recovery and resilience plan and it will create around 700 additional direct jobs at full construction.

“ST is transforming its global manufacturing operations, with an additional 300mm manufacturing capacity and a strong focus on wide bandgap semiconductors to support its $20 billion+ revenue ambition. We are expanding our operations to Catania, the center of our power semiconductor expertise and where we have already integrated SiC research, development and manufacturing with close collaboration with Italian research entities, universities and supplierssaid Jean-Marc Chery, Chairman and CEO of STMicroelectronics. “This new facility will be key to our vertical integration into SiC, strengthening our supply of SiC substrates as we further increase volumes to support our automotive and industrial customers in their transition to electrification and greater efficiency.”.

ST’s leadership in SiC is the result of 25 years of R&D focus and commitment with a broad portfolio of key patents. Catania has long been an important innovation site for ST as the home of the largest SiC R&D and manufacturing operations, successfully contributing to the development of new solutions to produce more and better SiC devices. With an established ecosystem on power electronics, including a fruitful long-term collaboration between ST and different stakeholders (University, CNR -Italian National Research Council-, companies involved in equipment manufacturing and products) as well as a wide network of suppliers, this investment will strengthen Catania’s role as a global competence center for silicon carbide technology and for new growth opportunities.

ST’s state-of-the-art, high-volume STPOWER SiC products are currently manufactured at its plants in Catania and Ang Mo Kio (Singapore). Assembly and testing are carried out at the back-end sites in Shenzhen (China) and Bouskoura (Morocco). The investment in this SiC substrate manufacturing facility builds on this expertise and is an important step on ST’s path to achieving 40% in-house substrate sourcing by 2024.

About STMicroelectronics
At ST, we are 48,000 creators and manufacturers of semiconductor technologies mastering the semiconductor supply chain with state-of-the-art manufacturing facilities. As a manufacturer of embedded devices, we work with more than 200,000 customers and thousands of partners to design and create products, solutions and ecosystems that meet their challenges and opportunities, and the need to support a world more sustainable. Our technologies enable smarter mobility, more efficient power and energy management, and large-scale deployment of the Internet of Things and connectivity. ST is committed to becoming carbon neutral by 2027. More information is available at

For more information, please contact:

Celine Berthier
Group Vice President, Investor Relations
Tel +41 22 929 58 12
[email protected]

Alexis Breton
External company communications
Tel +336 5916 7908
[email protected]

  • C3124C – Catania SiC Substrates Press Release

Comments are closed.